文献类型： 外文期刊

作者： Pang, Qingqing ¹ ; Chen, Hongliang ³ ; Wang, Xiuyan ³ ; Wang, Tao ⁴ ; Wang, Deyan ⁵ ; Feng, Shaoguang ³ ; Lu, Honglian ¹ ;

作者机构： 1.Fudan Univ, iChEM Collaborat Innovat Ctr Chem Energy Mat, Dept Chem, Shanghai 200433, Peoples R China

2.Fudan Univ, Shanghai Key Lab Mol Catalysis & Innovat Mat, Shanghai 200433, Peoples R China

3.Dow Chem China Investment Co Ltd, Shanghai Dow Ctr, Shanghai 201203, Peoples R China

4.Fudan Univ, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

5.Rohm & Haas Elect Mat LLC, Marlborough, MA 01752 USA

关键词： field effect transistors;graphene scaffold;high-k dielectrics;metal-organic oligomer;p-type characteristic

期刊名称：ADVANCED ELECTRONIC MATERIALS （ 影响因子：7.295； 五年影响因子：7.418 ）

ISSN： 2199-160X

年卷期： 2018 年 4 卷 1 期

页码：

收录情况： SCI

摘要： Ionic liquid-gated electric double layer transistors (EDLTs), bottom-gated field effect transistors (FETs), and vertical Schottky barrier transistors are fabricated by utilizing in situ prepared heterostrutural nanofilms. The nanofilms feature graphene scaffolds on top of high-k ZrO2 dielectric, which allow transfer-free fabrication of various transistor devices. Both the ionic liquid-gated EDLT and bottom-gated FET feature p-type characteristic behaviors with notable I-on/I-off ratio and effective carrier modulation ability. Furthermore, the applicability of the layered structure is demonstrated in construction of vertical Schottky barrier transistors, and evident rectification behavior is revealed. With the capability to construct multilayer heterostructural nanofilms on various substrates and further optimizing the interfaces between these layers for targeted modulation, the presented electronic materials show potential application in graphene-based transistor fabrication.